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Daftar Persamaan Transistor. PERSAMAAN TRANSISTOR. KODE Transistor. BC107 BC108 BC109 BC147 BC148 BC149 BC171 BC172 BC173 BC182 BC183 BC184 BC207. Pandai Elektronika-- Kegunaan dari daftar persamaan transistor adalah untuk memudahkan kita dalam membeli komponen eletronika khususnya transistor. Apabila saat membeli transistor namun transistor tersebut yang kita cari telah habis dan tidak dijual lagi maka kita bisa mlakukan alternatif lain yaitu menggunakan persamaannya.
Type Designator: S9013
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
S9013 Transistor Equivalent Substitute - Cross-Reference Search
S9013 Datasheet (PDF)
1.1. s9013h s9013g s9013i.pdf Size:192K _update
MCC S9013-G TM Micro Commercial Components 20736 Marilla Street Chatsworth S9013-H Micro Commercial Components CA 91311 S9013-I Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 0.5A • Collector-base Voltage 40V Transistors • Operating and
1.2. mms9013-l.pdf Size:201K _upd
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMS9013-H Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating
1.3. mms9013-h.pdf Size:201K _upd
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMS9013-H Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating
1.4. ss9013.pdf Size:40K _fairchild_semi
SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-
1.5. ss9013.pdf Size:53K _samsung
SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO
1.6. sts9013.pdf Size:197K _auk
STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features • Excellent hFE linearity. E • Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base
1.7. s9013.pdf Size:343K _secos
1.8. s9013w.pdf Size:54K _secos
S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120~200 200~350 300~400 D Marking Code J3 H
![Buku persamaan transistor Buku persamaan transistor](/uploads/1/2/5/7/125745910/959457927.jpg)
1.9. s9013t.pdf Size:95K _secos
S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of '-C' specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation P CM : 0.625 W Tamb=25 C Collector current CM: 0.5 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.
1.10. s9013.pdf Size:587K _htsemi
S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Diss
1.11. s9013w.pdf Size:431K _htsemi
S901 3W TRANSISTOR(NPN) SOT–323 FEATURES ? High Collector Current ? Excellent HFE Linearity MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipation 200 mW
1.12. s9013.pdf Size:240K _gsme
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 ? GM9012 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Character
1.13. s9013 to-92.pdf Size:158K _lge
S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (millimeter
1.14. s9013 sot-23.pdf Size:167K _lge
S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Curre
1.15. s9013lt1.pdf Size:125K _wietron
S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE
1.16. s9013.pdf Size:256K _can-sheng
TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES z FEATURES TO-92 Complementary to S9012 z Excellent hFE linearity 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Val
1.17. s9013 sot-23.pdf Size:260K _can-sheng
深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单ä½
1.18. s9013.pdf Size:407K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi
1.19. s9013lt1.pdf Size:359K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter
Datasheet: FMMTL619, FZT1049A, FZT1051A, FZT1151A, FZT489, FZT491A, FZT589, FZT591A, 9014, MMBT2222AT, MMBT3904LP, MMBT3904T, MMBT3906LP, MMBT3906T, MMBT4401T, MMBT4403T, MMDT2222A.
LIST
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![Software persamaan transistor Software persamaan transistor](/uploads/1/2/5/7/125745910/818445925.jpg)
BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |
BJT TOP50: 2N2222 | 2N3055 | BC547 | 2N3904 | 2N2222A | BC107 | C945 | BC548 | BD139 | 8050 | S8050 | BC557 | BC337 | TIP31 | D882 | AC128 | BC108 | S9014 | C1815 | BD140 | 2N3906 | S8550 | 8550 | 2SC945 | 2SC5200 | BC547B | 2N5551 | MJE13003 | 9014 | BC549 | BC148 | TIP122 | 9013 | 2N2907 | BC558 | BC327 | C102 | A733 | 2SC1815 | 2N60C | 2N222 | 2N4401 | BC109 | BD135 | S9013 | BC546 | A1015 | 9012 | 431 | 2N3773 |
MOSFET TOP30: IRF3205 | IRFZ44N | IRF740 | IRF540 | IRF840 | BS170 | IRFZ44 | IRF640 | IRF540N | 2N7000 | IRF630 | IRFP460 | IRFZ46N | IRF530 | IRF1404 | IRF3710 | IRFZ34N | IRFP250 | BUZ11 | RFP50N06 | IRF520 | IRFP450 | IRFB3306 | IRF510 | IRF830 | 2N5484 | IRF730 | IRF150 | STF5N52U | IRF2807 |
IGBT TOP15: IRGP4086 | CT60AM-18F | FGPF4633 | G40N60B3 | IRG7IC28U | G20N60B3D | IXGR40N60C2D1 | G7N60C3D | RJP30H1DPD | IKW50N60H3 | 10N40F1D | GT60M303 | FGH40N60SFD | IRG4BC30W-S | IRG4PC50UD |
Choosing Bipolar Transistor Replacements
TOTAL: 117438 transistors
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BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |